vs-25tts..pbf series, vs-25tts..-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 1 document number: 94385 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thyristor high voltage, phase control scr, 25 a features ? designed and qualified according to jedec-jesd47 ? 125 c max. operating junction temperature ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor contro l, ups, welding, and battery charge. description the vs-25tts... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-220ab diode variation single scr i t(av) 16 a v drm /v rrm 800 v, 1200 v v tm 1.25 v i gt 45 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab available output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, ? common heatsink of 1 c/w 18 22 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal wa v eform 16 a i rms 25 v rrm /v drm 800/1200 v i tsm 320 a v t 16 a, t j = 25 c 1.25 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-25tts08pbf, VS-25TTS08-M3 800 800 10 vs-25tts12pbf, vs-25tts12-m3 1200 1200
vs-25tts..pbf series, vs-25tts..-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 2 document number: 94385 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum a v erage on-state current i t(av) t c = 93 c, 180 conduction half sine wave 16 a maximum rms on-state current i rms 25 maximum peak, one-cycle, ? non-repetiti v e surge current i tsm 10 ms sine pulse, rated v rrm applied 270 10 ms sine pulse, no v oltage reapplied 320 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 365 a 2 s 10 ms sine pulse, no v oltage reapplied 515 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no v oltage reapplied 5152 a 2 ? s maximum on-state v oltage drop v tm 16 a, t j = 25 c 1.25 v on-state slope resistance r t t j = 125 c 12.0 m ? threshold v oltage v t(to) 1.0 v maximum re v erse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, ? t j = 25 c - 150 maximum latching current i l anode supply = 6 v, resistive load, t j = 25 c 200 maximum rate of rise of off-state v oltage dv/dt t j = t j max., linear to 80 c, v drm = r g - k = open 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum a v erage gate power p g(av) 2.0 maximum peak positi v e gate current + i gm 1.5 a maximum peak negati v e gate v oltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc gate ? v oltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate v oltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical re v erse reco v ery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-25tts..pbf series, vs-25tts..-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 3 document number: 94385 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 1.1 c/w maximum thermal resistance, ? junction to am b ient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (l b f in) maximum 12 (10) marking de v ice case style to-220ab 25tts08 25tts12 110 100 90 130 015 maximum allowable case temperature (c) average on-state current (a) 520 10 120 25tts.. series r thjc (dc) = 1.1 c/ w 30 60 90 120 1 8 0 ? cond u ction angle 110 100 90 8 0 130 015 maximum allowable case temperature (c) average on-state current (a) 5202530 10 120 25tts.. series r thjc (dc) = 1.1 c/ w ? cond u ction period 30 60 90 120 1 8 0 dc 0 5 10 15 20 25 04 8 12 16 20 maximum average on-state power loss (w) average on-state current (a) ? cond u ction angle 25tts.. series t j = 125 c 1 8 0 120 90 60 30 rms limit 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 maximum average on-state power loss (w) average on-state current (a) dc 1 8 0 120 90 60 30 rms limit 25tts.. series t j = 125 c ? cond u ction period
vs-25tts..pbf series, vs-25tts..-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 4 document number: 94385 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetiti v e surge current fig. 6 - maximum non-repetiti v e surge current fig. 7 - on-state voltag e drop characteristics fig. 8 - gate characteristics 120 1 10 100 200 240 2 8 0 300 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t j = 150 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s at any rated load condition and w ith rated v rrm applied follo w ing s u rge v s-25tts.. series 260 220 140 160 1 8 0 150 100 0.01 0.1 1 200 250 300 350 pulse train duration (s) peak half sine wave on-state current (a) maxim u m non-repetitive s u rge c u rrent vers u s p u lse train d u ration. control of cond u ction may not be maintained. initial t j = 150 c n o voltage reapplied rated v rrm reapplied v s-25tts.. series 10 100 1 10 012345 1000 instantaneous on-state current (a) instantaneous on-state voltage (v) 25tts.. series t j = 25 c t j = 125 c 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 (1) p gm = 40 w , t p = 1 ms (2) p gm = 20 w , t p = 2 ms (3) p gm = 8 w , t p = 5 ms (4) p gm = 4 w , t p = 10 ms (b) (a) rectang u lar gate p u lse a) recommended load line for rated di/dt: 10 v , 20 t r = 0.5 s, t p 6 s b) recommended load line for 30 % rated di/dt: 10 v , 65 t r = 1 s, t p 6 s v gd i gd fre qu ency limited by p g(a v ) t j = 10 c t j = 25 c t j = 125 c (1) (2) (3) (4) 25tts.. series
vs-25tts..pbf series, vs-25tts..-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 5 document number: 94385 for technical questions within your region: diodes-tech@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - thermal impedance z thjc characteristics ordering information table 0.01 1 10 110 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 0.1 single p u lse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8 25tts.. series steady state val u e (dc operation) ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-25tts08pbf 50 1000 antist atic plastic tubes VS-25TTS08-M3 50 1000 antist atic plastic tubes vs-25tts12pbf 50 1000 antist atic plastic tubes vs-25tts12-m3 50 1000 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -m3 www.vishay.com/doc?95028 2 - current rating (25 = 25 a) 3 - circuit configuration: 4 - package: 5 t = single thyristor - type of silicon: 6 - voltage rating t = to-220ab s = standard recovery rectifier 7 08 = 800 v 12 = 1200 v device code 6 2 4 3 5 7 25 t t s 12 pbf vs- 1 1 - vishay semiconductors product - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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